The authors present the first demonstration of the room-temperature continuous-wave operation of AlGaAs quantum well red (~700 nm) vertical-cavity surface emitting lasers fabricated by the selective oxidation process. The threshold current is ~3.2 mA with an output power of up to 44 μW. The laser structures, containing five Al 0.24Ga0.76As quantum wells, were grown on GaAs (311)A substrates by metal organic vapour phase epitaxy
Published in:
Electronics Letters
(Volume:32
,
Issue:
21
)
Date of Publication: 10 Oct 1996