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A chip-level electrothermal-coupled design model for high-power light-emitting diodes

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5 Author(s)
Huang, Shanjin ; State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China and School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China ; Hao Wu ; Fan, Bingfeng ; Zhang, Baijun
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3311564 

An advanced three-dimensional electrothermal-coupled simulation model basing on finite-element method numerical simulation is developed to study the electrical and thermal properties of chip-level high-power GaN-based light-emitting diodes (LEDs). The current spreading, heat generation, and transfer in the device are comprehensively considered in this model. The current-spreading effect of the transparent current-spreading layer and the thermal performance of LEDs with interdigitated-electrodes are investigated. The simulation results prove that the temperature distribution in the active layer is strongly affected by the electrode pattern. The obvious heat accumulation in LEDs with conventional interdigitated-electrode patterns can be seen both in the simulated results and the infrared measured results. The heat transfer efficiency can be improved by using a symmetry electrode pattern design. The thermal management of the bump configurations in flip-chip LEDs is also studied. A more reasonable and thermal effective bump configuration is presented, and the simulated results show that a lower average temperature and more uniform heat distribution in the chips can be obtained.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 5 )

Date of Publication:

Mar 2010

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