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Validation of the Compatibility Between a Porous Silicon-Based Gas Sensor Technology and Standard Microelectronic Process

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4 Author(s)
G. Barillaro ; Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, University of Piza, Pisa, Italy ; P. Bruschi ; G. M. Lazzerini ; L. M. Strambini

The compatibility of a recently proposed porous silicon formation procedure for gas sensor integration with a commercial microelectronic process is analyzed. Porous silicon-based gas sensors have been produced on a test chip by means of a post-processing approach that enables silicon anodization in selected areas. The effects of the post-processing procedure on electronic circuits, integrated on the test chip as the sensors, have been investigated by electrical measurements. Critical electrical parameters of purposely-designed high-performance analog cells have been measured on several post-processed and not post-processed samples. Experimental outcomes demonstrate the actual compatibility of the post-processing procedure for porous silicon formation with commercial microelectronic processes.

Published in:

IEEE Sensors Journal  (Volume:10 ,  Issue: 4 )