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Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design

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7 Author(s)
Raffo, A. ; Dept. of Eng., Univ. of Ferrara, Ferrara, Italy ; Vadala, V. ; Schreurs, D.M.M. ; Crupi, G.
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This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:58 ,  Issue: 4 )