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Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

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9 Author(s)
Yu-Lun Lu ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Fu-Kuo Hsueh ; Kuo-Ching Huang ; Tz-Yen Cheng
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In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) dopant-activation technique. We compared both low-temperature MW annealing and rapid thermal annealing. We successfully activated the source/drain region and suppressed the short-channel effects using low-temperature MW annealing. This technique is promising from the viewpoint of realizing high-performance and low-cost upper layer nanoscale transistors required for low-temperature 3-D integrated circuit fabrication.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )

Date of Publication:

May 2010

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