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A Broadband High Efficiency High Output Power Frequency Doubler

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3 Author(s)
Hong-Yeh Chang ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Guan-Yu Chen ; Yue-Ming Hsin

An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 ??m AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1B) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 4 )