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21 dB gain 87 GHz low-noise amplifier using 0.18μm SiGe BiCMOS

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4 Author(s)
A. Y. -K. Chen ; Bell Laboratories, Alcatel-Lucent, Murra y Hill, NJ, USA, Department of ECE, University of Florida ; Y. Baeyens ; Y. -K. Chen ; J. Lin

The performance of a single-ended two-stage high gain low-noise amplifier (LNA) fabricated in a low-cost 200 GHz fT and fmax 0.18 μm SiGe BiCMOS technology is presented. The LNA shows a maximum power gain of 21 dB at 87 GHz with a 3 dB bandwidth from 81 to 92.6 GHz. The measured noise figure is 9.1 dB at 87 GHz and is in the range 8-10 dB from 80 to 93 GHz. The reverse isolation is better than 45 dB over a 3 dB bandwidth. The measured input and output return losses are 17.3 and 11.7 dB at 87 GHz, respectively. The measured input-referred 1 dB compression point (input PidB) of the amplifier is -18.8 dBm at 87 GHz. The chip area including the pads is 635 x 625 μm. The LNA draws a total current of 15.2 mA from a 3.3 V supply.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 5 )