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A transparent resistive random access memory (T-RRAM) based on ITO/Gd2O3/ITO capacitor structure is successfully fabricated on glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.
Date of Conference: 3-8 Jan. 2010