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TiO2 films were deposited on different substrates such as SiNx/Si, SiOx/Si, Si and Ge by a sol-gel method. The structural properties of the films were investigated by XRD, SEM and XPS. The results showed that the substrates played a crucial role in the crystalline quality and materials stoichiometry of sol-gel derived TiO2 films. Especially, the film deposited on SiNx/Si substrate had a better crystalline quality and materials stoichiometry than other samples because the SiNx layer can effectively reduce defects formation resulting from oxygen deficiency.
Date of Conference: 3-8 Jan. 2010