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A compact model incorporating quantum effects for ultra-thin-body Double-Gate MOSFETs

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4 Author(s)
Medury, Aditya Sankar ; Dept. of Electr. & Commun. Eng., Indian Inst. of Sci., Bangalore, India ; Majumdar, K. ; Bhat, N. ; Bhat, K.N.

We propose a compact model which predicts the channel charge density and the drain current which match quite closely with the numerical solution obtained from the Full-Band structure approach. We show that, with this compact model, the channel charge density can be predicted by taking the capacitance based on the physical oxide thickness, as opposed to Ceff, which needs to be taken when using the classical solution.

Published in:

Nanoelectronics Conference (INEC), 2010 3rd International

Date of Conference:

3-8 Jan. 2010

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