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Rare-earth (Gd) doped InGaN films and superlattices (SLs) were synthesized by electron cyclotron resonance (ECR) plasma-assisted molecular beam epitaxy (MBE) in the pursuit of new functional diluted magnetic semiconductors (DMSs). X-ray diffraction profiles of InGa(Gd)N epilayers indicated no phase separation with the avoidance of InN and GdN formation. Gd incorporation into the epilayers was confirmed by electron probe microscope analyzer. Local structure around the Gd atom was investigated by XAFS measurement using Gd LIII edge. It was shown that Gd atoms were mainly incorporated into the Ga sites in the InGaGdN epilayers.