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Vertical growth of Mn:Ge nanowires and their magnetic properties

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9 Author(s)
Kim, Ungkil ; Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea ; Park, Tae-Eon ; Il-Soo Kim ; Seong, Han-Kyu
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We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.

Published in:

Nanoelectronics Conference (INEC), 2010 3rd International

Date of Conference:

3-8 Jan. 2010