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Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer

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5 Author(s)
C. H. Park ; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea ; K. H. Lee ; B. H. Lee ; Myung M. Sung
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We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ~20 V and also exhibits WR-ER current ratio of 4×102.

Published in:

2010 3rd International Nanoelectronics Conference (INEC)

Date of Conference:

3-8 Jan. 2010