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Alloys of germanium (Ge) and tin (Sn) get much research attention because of possible direct band gap semiconductors. In this paper, we report the growth of Ge1-xSnx thin film deposited on Ge (100) with different Sn compositions ranging from 4% to 20% by Molecular Beam Epitaxy (MBE). Different experimental techniques are employed to characterize the film including, Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD), and Raman scattering measurement. From the analysis, it shows that high quality film can be obtained which is desired for optoelectronic devices.