Strained Ge1-xSnx thin film on Ge (100) with low temperature Ge buffer layer

Alloys of germanium (Ge) and tin (Sn) get much research attention because of possible direct band gap semiconductors. In this paper, we report the growth of Ge
_1-x
Sn
_x
thin film deposited on Ge (100) with different Sn compositions ranging from 4% to 20% by Molecular Beam Epitaxy (MBE). Different experimental techniques are employed to characterize the film including, Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD), and Raman scattering measurement. From the analysis, it shows that high quality film can be obtained which is desired for optoelectronic devices.