By Topic

In-situ transmission electron microscopy study of nanotwinned copper under electromigration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chien-Neng Liao ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, China ; Kuan-Chia Chen ; Wen-Wei Wu ; Lih-Juann Chen
more authors

Nanotwinned copper has drawn growing attention recently due to its substantially enhanced mechanical strength and negligible increase in electrical resistivity. The stability of nanotwins under mechanical and electrical stressing becomes a critical consideration. Using a high resolution transmission electron microscopy, we observed that the {112} incoherent twin boundary (TB) and {111} coherent TB migrate at a rate of 0.06 ~ 0.09 nm/s in copper under an electric current density of 2×106 A/cm2. The TB migration is possibly associated with an atomic step moving along either {111} or {112} plane and the TB migration rate is mainly controlled by the incubation time of forming new atomic steps. To form such atomic steps, EM-induced diffusion at junctions where TBs meet a grain boundary or free surface may play an important role.

Published in:

2010 3rd International Nanoelectronics Conference (INEC)

Date of Conference:

3-8 Jan. 2010