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Flexible thin film transistors (TFT) were fabricated with randomly oriented single-walled carbon nanotubes (SWNTs) synthesized selectively on a designed array of catalyst photoresists using the plasma-enhanced chemical vapor deposition (PECVD) method. The process involves SWNTs growth on SiO2/Si substrates, followed by transfer-printing of tubes onto thin, flexible sheets of plastic. Electrical measurements on the resulting devices reveal good characteristics. These results might be of interest for various applications of SWNTs in flexible electronics.