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The results from electrical measurements on an individual NiS2 nanowire produced by an innovative method of direct-write electron beam lithography (EBL) are discussed in this presentation. The technique relies on the ability of a metal precursor to serve as an e-beam resist while patterning, which may be transformed to a desired nanomaterial in subsequent step(s). The I-V data from the fabricated circuit was linear and the resistivity estimated was approximately two orders of magnitude less compared to the bulk NiS2 resistivity. This is first direct evidence of metallicity of a NiS2 nanowire at room temperature.