By Topic

Electronics and photonics prototype devices based on compound semiconductor nanowires/nanobelts

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
L. Dai ; Department of Physics and State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, China ; G. G. Qin

We present synthesis and in-situ doping of several important n-type and p-type compound semiconductor 1D nanomaterials via the chemical vapor deposition method, and the nanoelectronic and nanophotonic prototype devices based on these nanomaterials. Various high performance nanoelectronic devices, including metal-insulator-semiconductor field-effect transistors (FETs), metal-semiconductor FETs, and NOT, NOR and NAND logic gates based on FETs, have been fabricated and studied. Various NW (NB)/p+-Si heterojunction electroluminescence devices have been fabricated and studied. CdS NW ring cavities were fabricated and a straight CdS NW with Fabry-Perot cavity structure was employed to couple the light out from the ring cavity.

Published in:

2010 3rd International Nanoelectronics Conference (INEC)

Date of Conference:

3-8 Jan. 2010