By Topic

Nucleation and growth of epitaxial silicide in nanowire of silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chou, Yi-Chia ; Dept. of Mater. Sci. & Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA ; Kuo-Chang Lu ; Tu, K.N.

When two nanowires cross each other, they form a point contact. Point contact reaction between a nano metal wire and a nano Si wire has been studied by using ultra-high vacuum and high resolution transmission electron microscopy. Axel epitaxial growth of nano silicides of NiSi and CoSi2 in nanowires of Si has been observed. The nucleation stage and stepwise growth stage of the reactive epitaxial growth of nano silicide on nano Si have been measured. A repeating event of homogeneous nucleation has been found, which enables us to estimate the number of molecules in a critical nucleus to be about 10 using the Zeldovich factor. A comparison to heterogeneous nucleation will be made. The nucleation-controlled or supply-controlled growth mode of point contact reactions is different from the well-known diffusion-controlled and interfacial-reaction-controlled modes of growth in thin film and bulk samples.

Published in:

Nanoelectronics Conference (INEC), 2010 3rd International

Date of Conference:

3-8 Jan. 2010