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Insight into the S/D engineering by high-resolution imaging and precise probing of 2D-carrier profiles with scanning spreading resistance microscopy

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11 Author(s)
Li Zhang ; Advanced LSI Technology Laboratory, Corporate Research & Development Center, Semiconductor Company, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan ; Masumi Saitoh ; Atsuhiro Kinoshita ; Nobuaki Yasutake
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For the first time, high-resolution carrier imaging has been carried out on (110)/(100) pFETs and nFETs with scanning spreading resistance microscopy (SSRM). The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron I/I. Direct evidence has been shown that As out-diffusion under NiSi made conductive paths that degrade junction leakage on (110) nFETs. The Si:C influences on S/D profiles are also directly observed. We also succeeded in a full-FIB sample-making for the first time, showing the high potential of SSRM technology for further scaled devices.

Published in:

2009 IEEE International Electron Devices Meeting (IEDM)

Date of Conference:

7-9 Dec. 2009