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Self-consistent Monte Carlo device simulations under nano-scale device structures: role of Coulomb interaction, degeneracy, and boundary condition

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3 Author(s)
Kohei Nakanishi ; Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, JAPAN ; Tadayoshi Uechi ; Nobuyuki Sano

The self-consistent 3D Monte Carlo device simulator including the full Coulomb interaction is constructed. We demonstrate that the boundary condition for the electron distribution function plays an essential role to obtain correct transport characteristics and that the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties.

Published in:

2009 IEEE International Electron Devices Meeting (IEDM)

Date of Conference:

7-9 Dec. 2009