Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; ¿Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)¿ that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.