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Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

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5 Author(s)
Takao Marukame ; Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corp., 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan ; Tomoaki Inokuchi ; Mizue Ishikawa ; Hideyuki Sugiyama
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For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; ¿Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)¿ that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

Published in:

2009 IEEE International Electron Devices Meeting (IEDM)

Date of Conference:

7-9 Dec. 2009