By Topic

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Marukame, Takao ; Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan ; Inokuchi, T. ; Ishikawa, M. ; Sugiyama, H.
more authors

For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; ¿Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)¿ that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009