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Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

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7 Author(s)
Oh, H.J. ; Dept. of ECE, Nat. Univ. of Singapore, Singapore, Singapore ; Lin, J.Q. ; Suleiman, S. ; Lo, G.Q.
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Plasma-based PH3 passivation technique is extensively studied for the surface passivation of InGaAs substrate prior to high-k deposition. The comparative analysis reveals that the striking improvement is achieved when a stable covalent-bond PxNy layer forms at the interface during plasma PH3-passivation. We report that PxNy passivation layer improves thermal stability of high-k/InGaAs gate stack up to 750°C, which enables successful implementation of InGaAs MOSFETs by self-aligned gate-first process. By adopting PxNy passivation on InGaAs with MOCVD HfAlO and metal gate stack, we achieved subthreshold slope of 98mV/dec, Gm=378mS/mm at Vd=1V, and effective mobility of 2557cm2/Vs at Eeff=0.24MV/cm.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009