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Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

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7 Author(s)
H. J. Oh ; Silicon Nano Device Laboratory, Department of ECE, National University of Singapore, Singapore 117576 ; J. Q. Lin ; S. A. B. Suleiman ; G. Q. Lo
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Plasma-based PH3 passivation technique is extensively studied for the surface passivation of InGaAs substrate prior to high-k deposition. The comparative analysis reveals that the striking improvement is achieved when a stable covalent-bond PxNy layer forms at the interface during plasma PH3-passivation. We report that PxNy passivation layer improves thermal stability of high-k/InGaAs gate stack up to 750°C, which enables successful implementation of InGaAs MOSFETs by self-aligned gate-first process. By adopting PxNy passivation on InGaAs with MOCVD HfAlO and metal gate stack, we achieved subthreshold slope of 98mV/dec, Gm=378mS/mm at Vd=1V, and effective mobility of 2557cm2/Vs at Eeff=0.24MV/cm.

Published in:

2009 IEEE International Electron Devices Meeting (IEDM)

Date of Conference:

7-9 Dec. 2009