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Vth fluctuation suppression and high performance of HfSiON/metal gate stacks by controlling capping-Y2O3 layers for 22nm bulk devices

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8 Author(s)
Kamiyama, S. ; Res. Dept.1, Semicond. Leading Edge Technol. (Selete), Inc., Tsukuba, Japan ; Kurosawa, E. ; Abe, S. ; Kitajima, M.
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We have succeeded in suppressing random threshold voltage (Vth) fluctuations by controlling capping-layers and high-k materials with metal gate first stacks for 22 nm-node devices. By employing 1-2 mono Y2O3-layers on HfSiON films, Vth fluctuations are the same as with non-capped samples, while maintaining excellent Vth controllability (|¿Vth| > 180 mV). Furthermore, the devices exhibit high device performance because ultra-thin equivalent-oxide-thickness (EOT: 0.74 nm) can be achieved with high electron carrier mobility, and very high drain current (Ion > 1060 ¿A/¿m) at an Ioff value of 100 nA/¿m.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009

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