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We have succeeded in suppressing random threshold voltage (Vth) fluctuations by controlling capping-layers and high-k materials with metal gate first stacks for 22 nm-node devices. By employing 1-2 mono Y2O3-layers on HfSiON films, Vth fluctuations are the same as with non-capped samples, while maintaining excellent Vth controllability (|Â¿Vth| > 180 mV). Furthermore, the devices exhibit high device performance because ultra-thin equivalent-oxide-thickness (EOT: 0.74 nm) can be achieved with high electron carrier mobility, and very high drain current (Ion > 1060 Â¿A/Â¿m) at an Ioff value of 100 nA/Â¿m.
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009