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The scaling behavior of ultra-scaled InAs HEMTs is investigated using a 2-dimensional real-space effective mass ballistic quantum transport simulator. The simulation methodology is first benchmarked against experimental Id-Vgs data obtained from devices with gate lengths ranging from 30 to 50 nm, where a good quantitative match is obtained. It is then applied to optimize the logic performance of not-yet-fabricated 20 nm InAs HEMT. It is demonstrated that the best performance is achieved in thin InAs channel devices by reducing the insulator thickness to improve the gate control while increasing the gate work function to suppress the gate leakage.
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009