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Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers

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8 Author(s)
Pogany, D. ; Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna, Austria ; Johnsson, D. ; Bychikhin, S. ; Esmark, K.
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Using a theory of front propagation in nonlinear active media we model the on-state spreading related voltage, current and on-state width transients in 90 nm CMOS silicon controlled rectifiers. The model explains well voltage transients during the rising edge of ESD pulses and predicts a non-trivial dependence of device voltage on number of triggering regions.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009