Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers

Using a theory of front propagation in nonlinear active media we model the on-state spreading related voltage, current and on-state width transients in 90 nm CMOS silicon controlled rectifiers. The model explains well voltage transients during the rising edge of ESD pulses and predicts a non-trivial dependence of device voltage on number of triggering regions.