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3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS)

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10 Author(s)
Lee, K.-W. ; Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan ; Noriki, A. ; Kiyoyama, K. ; Kanno, S.
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We proposed 3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS). In order to realize 3D opto-electronic integrated system-on-silicon (SOS), we developed novel heterogeneous integration technology of LSI, MEMS and optoelectronic devices by implementing 3D heterogeneous opto-electronic multi-chip module composed with LSI, passives, MEMS and optoelectronic devices. The electrical interposer mounted with amplitude shift keying (ASK) LSI, LC filter and pressure-sensing MEMS chips and the optical interposer embedded with vertical-cavity surface-emitting laser (VCSEL) and photodiode (PD) chips are precisely bonded to form 3D opto-electronic multi-chip module. Opto-electronic devices are electrically connected via through-silicon vias (TSVs) which were formed into the interposers. Micro-fluidic channels are formed into the interposer by wafer direct bonding technique. 3D heterogeneous opto-electronic multi-chip module is successfully implemented for the first time.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009