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Anomalous stress effects in ultra-thin silicon chips on foil

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6 Author(s)
Hassan, M.-U. ; Inst. for Microelectron. Stuttgart (IMS CHIPS), Stuttgart, Germany ; Rempp, H. ; Tu Hoang ; Richter, H.
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Apparently anomalous and transient piezoresistive effects are observed from CMOS transistors and diffused resistors fabricated on 20 ¿m thin, flexible chips for system-in-foil (SiF) applications. We show that this effect results from a transformation of uniaxial to biaxial stress according to the Poisson ratio of the visco-elastic epoxy glue used for chip attachment. This effect is further analyzed through current mirror circuits composed of orthogonally oriented transistors.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009