By Topic

Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nagashio, K. ; Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan ; Nishimura, T. ; Kita, K. ; Toriumi, A.

Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact properties by separating from the intrinsic conduction of graphene.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009