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Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

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4 Author(s)
Nagashio, K. ; Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan ; Nishimura, T. ; Kita, K. ; Toriumi, A.

Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact properties by separating from the intrinsic conduction of graphene.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009