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VMR: VLSI-compatible metallic carbon nanotube removal for imperfection-immune cascaded multi-stage digital logic circuits using Carbon Nanotube FETs

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7 Author(s)
Patil, N. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Lin, A. ; Jie Zhang ; Hai Wei
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Metallic carbon nanotubes (CNTs) create source-drain shorts in Carbon Nanotube Field Effect Transistors (CNFETs) resulting in excessive leakage (Ion/Ioff < 5) and highly degraded noise margins. A new technique, VLSI-compatible Metallic-CNT Removal (VMR), overcomes metallic CNT challenges by combining layout design with CNFET processing. VMR produces CNFET circuits with Ion/Ioff in the range of 103-105, and overcomes the limitations of existing metallic-CNT removal techniques. VMR enables first experimental demonstration of complex cascaded CNFET logic circuits. Such logic circuits are immune to both mis-positioned and metallic CNTs.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009