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Metallic carbon nanotubes (CNTs) create source-drain shorts in Carbon Nanotube Field Effect Transistors (CNFETs) resulting in excessive leakage (Ion/Ioff < 5) and highly degraded noise margins. A new technique, VLSI-compatible Metallic-CNT Removal (VMR), overcomes metallic CNT challenges by combining layout design with CNFET processing. VMR produces CNFET circuits with Ion/Ioff in the range of 103-105, and overcomes the limitations of existing metallic-CNT removal techniques. VMR enables first experimental demonstration of complex cascaded CNFET logic circuits. Such logic circuits are immune to both mis-positioned and metallic CNTs.
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009