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Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

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2 Author(s)
Luisier, M. ; Network for Comput. Nanotechnol. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA ; Klimeck, G.

Band-to-band tunneling transistors (TFETs) made of InSb, Carbon, and GaSb-InAs broken gap heterostructures are simulated using an atomistic and full-band quantum transport solver. The performances of two-dimensional single-gate and double-gate devices as well as three-dimensional gate-all-around structures are analyzed and compared to find the most promising TFET design. All transistor types are able to provide a region with a steep subthreshold slope, but despite their low band gap, InSb-and C-based (graphene nanoribbons and carbon nanotubes) devices do not offer high enough ON-currents, contrary to GaSb-InAs broken gap structures. However, the nanoribbon and nanotube TFETs can operate at much lower supply voltages than the III-V transistors.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009