Referenced Items are not available for this document.
For the first time we demonstrate the CMOS integration of undoped fully-depleted Ultra Thin Body and BOX devices (UTB2) with (110)/(100) substrate crystal orientation for pFET and nFET respectively. For this, we used an original 3D-folded Bulk+/Silicon-On-Nothing (SON) process on DSB substrate. Resulting multi-surface orientations devices are studied.
Published in:
Electron Devices Meeting (IEDM), 2009 IEEE International
Date of Conference: 7-9 Dec. 2009
- Page(s):
- 1 - 4
- E-ISBN :
- 978-1-4244-5640-6
- Print ISBN:
- 978-1-4244-5639-0
- INSPEC Accession Number:
- 11207391
- Conference Location :
- Baltimore, MD
- Digital Object Identifier :
- 10.1109/IEDM.2009.5424247
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
