High-performance InSb based quantum well field effect transistors for low-power dissipation applications

Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (f
_T
) of more than 250 GHz and power gain cut-off frequency (f
_max
) of 500 GHz. Outline designs confirm the potential for multi-stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.