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High-performance InSb based quantum well field effect transistors for low-power dissipation applications

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10 Author(s)
Ashley, T. ; Malvern Technol. Centre, Malvern, UK ; Emeny, M.T. ; Hayes, D.G. ; Hilton, K.P.
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Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of more than 250 GHz and power gain cut-off frequency (fmax) of 500 GHz. Outline designs confirm the potential for multi-stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.

Published in:

Electron Devices Meeting (IEDM), 2009 IEEE International

Date of Conference:

7-9 Dec. 2009

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