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The impact of band lineup and source doping concentration on the performance of heterojunction tunnel FETs (H-TFETs) with type-II heterointerface is investigated by simulations. Exemplarily, H-TFETs based on InAs/AlxGa1-xSb heterostructures are studied. Varying the Al content x, the band lineup can be adjusted from staggered to broken. We find that a staggered band lineup and a medium source doping concentration yield the best ON/OFF-state performance in terms of an inverse subthreshold slope that is smaller than 60 mV/dec and fT values in the terahertz range.