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Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model

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3 Author(s)
Rao, R. ; Dept. of Electr. Eng., Indian Inst. of Technol. (IIT) Madras, Chennai, India ; DasGupta, N. ; DasGupta, A.

An analytical threshold voltage model developed for a nonuniformly doped channel is used to study the random dopant fluctuation (RDF) effects in FD-SOI MOSFETs. RDF results in nonuniform doping in the channel, leading to deviation in the threshold voltage, which can be computed using this analytical model. The effect of device parameters on RDF-induced threshold voltage deviations is also investigated. For each study, a large sample size has been used. This has been possible owing to the computational efficiency of the analytical model. Studies on the threshold voltage variation due to combined effects of RDF and other device parameter fluctuations have also been carried out.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:10 ,  Issue: 2 )