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A 98 mm2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell

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9 Author(s)
Ohkawa, M. ; ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan ; Sugawara, H. ; Sudo, N. ; Tsukiji, M.
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In order to realize high-capacity and low-cost flash memory, we have developed a 64-Mb flash memory with multilevel cell operation scheme. The 64-Mb flash memory has been achieved in a 98 mm2 die size by using four-level per cell operation scheme, NOR type cell array, and 0.4-μm CMOS technology. Using an FN type program/erase cell allows a single 3.3 V supply voltage. In order to establish fast programming operation using Fowler-Nordheim (FN)-NOR type memory cell, we have developed a highly parallel multilevel programming technology. The drain voltage controlled multilevel programming (DCMP) scheme, the parallel multilevel verify (PMV) circuit, and the compact multilevel sense-amplifier (CMS) have been implemented to achieve 128 b parallel programming and 6.3 μs/Byte programming speed

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 11 )

Date of Publication:

Nov 1996

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