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RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning FEM integration on silicon. In this quest, SOI technology has already addressed two key blocks, the antenna switch and the power amplifier. In this paper, we will focus our investigation on high performance passives functions in order to demonstrate the capability of SOI CMOS technology to integrate the whole FEM. To do so, GSM and DCS harmonic filters have been achieved in a 130 nm SOI CMOS technology. Measured performances (insertion losses ~1 dB and harmonic rejection greater than 30 dB) are clearly competitive with most commercially available Integrated Device Passive (IPD) solutions.