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Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors

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4 Author(s)
Vorobiev, A. ; Chalmers Univ. of Technol., Gothenburg, Sweden ; Berge, J. ; Norling, M. ; Gevorgian, S.

Integration possibilities of BaxSr1-xTiO3 (BST) based tunable thin film bulk acoustic wave resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Date of Conference:

11-13 Jan. 2010

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