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TFMS Microstrip line modelling and characterization up to 110 GHz on 45 nm node silicon technology: application for CAD

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5 Author(s)
Quemerais, T. ; IMEP-LHAC, UJF, Grenoble, France ; Moquillon, L. ; Fournier, J.M. ; Benech, P.
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An improved analytical model for integrated microstrip line experienced on 45 nm silicon technology is proposed. This model is derived from previous classical ones used for PCB circuits. Improvements have been performed to take into account the sizing effects for integrated lines. The study is performed up to 110 GHz for different line widths and results accuracy allow implementing the model in CAD software like Eldo, Spectre and the Agilent tools (RFDE, ADS, and GoldenGate) for mm-wave designs.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Date of Conference:

11-13 Jan. 2010