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After conventional lumped-element de-embedding method (open-short and short-open) for a 1-port active element, the remaining impedance errors are observed above 30 GHz. In order to minimize the de-embedding errors for on-wafer measurement technique, a new de-embedding procedure based on the S-parameter description of the waveguide used as interconnect between device under test and prober head is proposed. The method is as tested with an integrated Si-Schottky diode up to 110 GHz. Reliable data were obtained.