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A de-embedding procedure for one-port active mm-wave devices

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2 Author(s)
Hongya Xu ; Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart, Germany ; Kasper, E.

After conventional lumped-element de-embedding method (open-short and short-open) for a 1-port active element, the remaining impedance errors are observed above 30 GHz. In order to minimize the de-embedding errors for on-wafer measurement technique, a new de-embedding procedure based on the S-parameter description of the waveguide used as interconnect between device under test and prober head is proposed. The method is as tested with an integrated Si-Schottky diode up to 110 GHz. Reliable data were obtained.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Date of Conference:

11-13 Jan. 2010