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TiO2 thin-film transistors fabricated by spray pyrolysis

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6 Author(s)
Wobkenberg, Paul H. ; Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom ; Ishwara, Thilini ; Nelson, J. ; Bradley, Donal D.C.
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We demonstrate electron transporting thin-film transistors based on TiO2 films deposited from solution by spray pyrolysis under ambient atmosphere. The field-effect electron mobility is found to depend strongly on the device architecture and the type of source and drain electrodes employed. For optimized transistors a maximum mobility value of 0.05 cm2/Vs is obtained. Furthermore, the TiO2 transistors show air-stable operating characteristics with a shelf life time of several months. This is the only report on electron transporting transistors based on thin-films of TiO2 deposited by spray pyrolysis. Such devices could be used for the study of charge carrier transport in TiO2 and other related materials.

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Applied Physics Letters  (Volume:96 ,  Issue: 8 )