We demonstrate electron transporting thin-film transistors based on TiO2 films deposited from solution by spray pyrolysis under ambient atmosphere. The field-effect electron mobility is found to depend strongly on the device architecture and the type of source and drain electrodes employed. For optimized transistors a maximum mobility value of 0.05 cm2/V s is obtained. Furthermore, the TiO2 transistors show air-stable operating characteristics with a shelf life time of several months. This is the only report on electron transporting transistors based on thin-films of TiO2 deposited by spray pyrolysis. Such devices could be used for the study of charge carrier transport in TiO2 and other related materials.