By Topic

Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Rubio-Roy, Miguel ; School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA ; Zaman, Farhana ; Hu, Yike ; Berger, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3334683 

Electronic quality epitaxial graphene has been selectively grown on silicon carbide capped with a patterned aluminum nitride layer, providing a pathway to produce device structures that avoid lithographic patterning of graphene itself. Patterning of the cap exposes SiC where graphene will grow. Capped areas inhibit graphene growth and withstand graphitization temperatures up to 1420°C under 100 Pa of argon pressure. Graphene Hall bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. Hall-mobility is about 600 cm2/Vs and can be further enhanced by fine tuning the argon pressure and improving the quality of SiC surface prior to graphitization.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 8 )