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Piezoelectric aluminum nitride resonator for oscillator

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9 Author(s)
Olivier Mareschal ; NXP Semiconductors, ESYCOM, ESIEE Paris & Universite Paris-Est, GREYC¿CNRS UMR6072, ENSICAEN & Universite de Caen Basse-Normandie ; Sebastien Loiseau ; Aurelien Fougerat ; Laurie Valbin
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This work investigates properties of the thin film elongation acoustic resonator (TFEAR) operating at megahertz frequencies in air. This resonator is composed of a piezoelectric layer of AlN sandwiched between 2 Al electrodes. TFEAR works in the extensional mode excited via AlN d31 piezoelectric coefficient. A 3D finite element method (3D-FEM) analysis using ANSYS software has been performed to model static modal and harmonic behavior of the TFEAR. To consider insertion losses into the substrate, equivalent electrical models based on a modified Butterworth-Van Dyke (MBVD) circuit have been improved by adding extra dissipative elements. Thus, a whole model for the on-wafer characterization setup is given, allowing for automatic de-embedding of the present TFEAR equivalent circuit. Quality factors Q as high as 2500 in air have been recorded with motional resistance lower than 400 ¿¿. A first oscillator based on a TFEAR resonator was also designed and tested.

Published in:

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:57 ,  Issue: 3 )