By Topic

Physical MOSFET's model for analog circuit design: application to current copier based architectures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
E. Robilliart ; Avenue Poincare, Cite Sci., Villeneuve d'Ascq, France ; E. Dubois

A one-dimensional numerical MOSFET model suitable for fast transient analysis of analog as well as digital circuits is presented. This model, based on a fast resolution of the Poisson and current continuity equations is continuous over all region of operation, from weak to strong inversion. Moreover, this modeling approach implicitly takes into account the non-quasi-static nature of the charge dynamics. This last feature proved to be very useful for the simulation of current copier based circuits that are strongly affected by charge injection effects. Systematic comparisons are given between this model, BSIM3 and two-dimensional (2D) simulations for basic and cascoded current copier cells

Published in:

Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on  (Volume:4 )

Date of Conference:

12-15 May 1996