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Physical MOSFET's model for analog circuit design: application to current copier based architectures

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2 Author(s)
Robilliart, Etienne ; Avenue Poincare, Cite Sci., Villeneuve d''Ascq, France ; Dubois, E.

A one-dimensional numerical MOSFET model suitable for fast transient analysis of analog as well as digital circuits is presented. This model, based on a fast resolution of the Poisson and current continuity equations is continuous over all region of operation, from weak to strong inversion. Moreover, this modeling approach implicitly takes into account the non-quasi-static nature of the charge dynamics. This last feature proved to be very useful for the simulation of current copier based circuits that are strongly affected by charge injection effects. Systematic comparisons are given between this model, BSIM3 and two-dimensional (2D) simulations for basic and cascoded current copier cells

Published in:

Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on  (Volume:4 )

Date of Conference:

12-15 May 1996

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