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Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

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15 Author(s)
Feroughi, O.M. ; Fakultät Physik/DELTA, Technische Universität Dortmund, 44221 Dortmund, Germany ; Sternemann, C. ; Sahle, Ch.J. ; Schroer, M.A.
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We present an x-ray scattering study of the temperature-induced phase separation and Si nanocrystal formation in bulk amorphous SiOx with x≈1. X-ray Raman scattering at the SiLII,III-edge reveals a significant contribution of suboxides present in native amorphous SiO. The suboxide contribution decreases with increasing annealing temperature between 800–1200 °C pointing toward a phase separation of SiO into Si and SiO2 domains. In combination with x-ray diffraction and small angle x-ray scattering the SiO microstructure is found to be dominated by internal suboxide interfaces in the native state. For higher annealing temperatures above 900 °C growth of Si nanocrystals with rough surfaces embedded in a silicon oxide matrix can be observed.

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Applied Physics Letters  (Volume:96 ,  Issue: 8 )