By Topic

Photoluminescence from exciton-exciton scattering in a GaAs1-xNx thin film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hashimoto, J. ; Department of Applied Physics, Graduate School of Engineering, Osaka City University, Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan ; Maeda, Y. ; Nakayama, M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated photoluminescence (PL) properties under high-density-excitation conditions at 10 K in a GaAs1-xNx thin film (x=0.008) with a narrow band-gap energy of 1.34 eV. A PL band was observed with a threshold-like nature, and its intensity was found to exhibit quadratic dependence on the excitation power. At the threshold excitation power, the PL-peak energy is lower than the energy of the fundamental exciton by the magnitude of the exciton binding energy that is ∼4 meV. The results described above indicate that the PL band originates from exciton-exciton scattering, the so-called P emission, which is typically observed in wide-gap semiconductors with large exciton binding energies. Furthermore, we have confirmed the existence of optical gain in the energy region of the P band using a variable-stripe-length method.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 8 )