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We have recently proposed a new type of bilayer graphene-based transistor for ultralow-power (perhaps 1000 times less compared with CMOS) room-temperature operation, namely, the bilayer pseudospin field-effect transistor (BiSFET). BiSFET operation is based on gated exciton-condensate-enhanced tunneling. Here, we discuss implementation, operation, and predicted power consumption of BiSFET-based Boolean logic gates, including an inverter, an inverter-based nor gate, and a programmable nand/or, as well as a BiSFET-based memory element. The advantages over CMOS in terms of lower voltage and power are discussed.