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We have studied the performance potentials of III-V semiconductors and Ge n-channel MOSFETs based on a quantum-corrected Monte Carlo device simulation. We found that as a ballistic limit is approached, III-V MOSFETs lose their inherent advantage over Si and Ge MOSFETs because current enhancement due to ballistic transport becomes less effective than in Si and Ge channels. However, a high source and drain doping concentration was found to greatly improve the performance of III-V MOSFETs by reducing parasitic resistance and the mitigation of ??source starvation?? attributed to the low density of states.