By Topic

Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tsuchiya, H. ; Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe, Japan ; Maenaka, A. ; Mori, T. ; Azuma, Y.

We have studied the performance potentials of III-V semiconductors and Ge n-channel MOSFETs based on a quantum-corrected Monte Carlo device simulation. We found that as a ballistic limit is approached, III-V MOSFETs lose their inherent advantage over Si and Ge MOSFETs because current enhancement due to ballistic transport becomes less effective than in Si and Ge channels. However, a high source and drain doping concentration was found to greatly improve the performance of III-V MOSFETs by reducing parasitic resistance and the mitigation of ??source starvation?? attributed to the low density of states.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 4 )